In the design of SMPS for industrial applications, the latest technology trends will consider the requirements of high efficiency, high power density and bus voltage rise as a whole, and therefore trigger the demand for 650V breakdown voltage power devices. Infineon Technologies Co., Ltd. (FSE: IFX/OTCQX: IFNNY)'s 650VCoolMOS™ CFD7 product series can meet the above needs. This device is suitable for resonant topologies for soft-switching applications, such as telecommunication power supplies, servers, solar energy and off-board electric vehicle charging.
The new 650V device extends the voltage range of the renowned CoolMOSCFD7 series and is the successor to the CoolMOSCFD2. The new 650V product can be matched with LLC and zero-voltage switching phase-shift full-bridge topology, which can provide many advantages over previous generations. The breakdown voltage of this product series is increased by 50V, with integrated high-speed body diode technology and better switching performance, which is very suitable for contemporary designs. The extremely low reverse recovery charge and excellent thermal performance also add more advantages.
Switching loss and RDS (on) overheating dependence are greatly reduced, this product series has very excellent hard rectification durability. Due to improved gate charge (Qg) and fast switching performance, the 650VCoolMOSCFD7 series can improve the efficiency of the entire load range. In major SMPS applications, compared to competing products, these MOSFETs provide excellent light-load efficiency, and full-load efficiency is also improved. In addition, the lowest RDS(on) in the same level also allows customers to increase the power density of SMPS at a very competitive price.
Manufacturer: Texas Instruments
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