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K9WBG08U1M-PIB0

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K9WBG08U1M-PIB0 Overview

GENERAL DESCRIPTION 
Offered in 2Gx8bit, the K9KAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. The device is offered in 3.3V vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (4K+128)Byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)Byte block. Data in the data register can be read out at 25ns(K9NCG08U5M: 50ns) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9KAG08U0M′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9KAG08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 16Gb stacked with two chip selects is also available in standard 32Gb TSOPI package and another ultra high density solution having two 32Gb TSOPI package stacked with four chip selects is also available in 64Gb TSOPIDSP. 
FEATURES
• Voltage Supply
- 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (2G + 64M) x 8bit
- Data Register : (4K + 128) x 8bit
• Automatic Program and Erase
- Page Program : (4K + 128)Byte
- Block Erase : (256K + 8K)Byte
• Page Read Operation
- Page Size : (4K + 128)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
K9NCG08U5M : 50ns(Min.)
• Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9KAG08U0M-PCB0/PIB0 : Pb-FREE PACKAGE  48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9WBG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE  48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9WBG08U1M-ICB0/IIB0  52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
- K9MCG08U5M-PCB0/PIB0 : Pb-FREE PACKAGE  48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)

Circuit Diagram

K9WBG08U1M-PIB0

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