TPS22969DNYR Texas Instruments MCU

TPS22969DNYR Overview

The TPS22969 is a small, ultra-low R_ON, single channel load switch with controlled turn on. The device contains an N-channel MOSFET that can operate over an input voltage range of 0.8 V to 5.5 V and can support a maximum continuous
current of 6 A.

The combination of ultra-low R_ON and high current capability of the device makes it ideal for driving processor rails with very tight voltage dropout tolerances. The controlled rise time of the device greatly reduces inrush current caused by large bulk load capacitances, thereby reducing or eliminating voltage droop on the power supply. The switch can be independently controlled via the ON pin, which is capable of interfacing directly with low-voltage control signals originating from microcontrollers or low voltage discrete logic. The device further reduces the total solution size by integrating a 224-Ω pull-down resistor for quick output discharge (QOD) when the switch is turned off.

The TPS22969 is available in a small 3.00 mm x 3.00 mm SON-8 package (DNY). The DNY package integrates a thermal pad which allows for high power dissipation in high current and high temperature applications. The device is characterized for operation over the free-air temperature range of –40°C to 105°C.

Features

Integrated Single Channel Load Switch
VBIAS Voltage Range: 2.5 V to 5.5 V
VIN Voltage Range: 0.8 V to 5.5 V
Ultra Low R_ON Resistance
- R_ON = 4.4 m at V_IN = 1.05 V (V_BIAS = 5 V)
6 A Maximum Continuous Switch Current
Low Quiescent Current
- (20 μA (Typ) for V_BIAS = 5 V)
Low Shutdown Current
- (1 μA (Typ) for V_BIAS = 5 V)
Low Control Input Threshold Enables Use of 1.2 V or Higher GPIO
Controlled and Fixed Slew Rate Across V_BIAS and V_IN
- t_R = 599 μs at V_IN = 1.05 V (V_BIAS = 5 V)
Quick Output Discharge (QOD)
SON 8-Pin Package with Thermal Pad
ESD Performance Tested per JESD 22
- 2-kV Human-Body Model (HBM)
- 1-kV Charged-Device Model (CDM)