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Circuit Breaker Thermal 1Pole 30A 250VAC
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MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS1MT adopts the Serial Peripheral Interface (SPI). The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS1MT can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS1MT does not take long time to write data like Flash memories or E2PROM, and MB85RS1MT takes no wait time.
Pin Assignment
Clock Frequency 40MHz
Operating Temperature -40℃ ~ 85℃ (TA)
Memory Interface SPI
Memory Size 1Mb (128K x 8)
Package / Case 8-XFBGA, WLCSP
Technology FRAM (Ferroelectric RAM)
Voltage - Supply 1.8V ~ 3.6V
Mounting Type Surface Mount
Memory Type Non-Volatile
Memory Format FRAM
Supplier Device Package 8-WLP (2.28x3.09)
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