Hello! Welcome to Embedic!
This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.
Home > Embedded ICs > Embedded - Memory > M29W128GH70N6E

M29W128GH70N6E

Pictures are for reference only Please prevail in kind

  • Quantity : *

  • Contact Name : *

  • Email : *

price SUPPLIERS WHOLESALE PRICE TRENDS

Price comparison from authorized distributors

price info M29W128GH70N6E Competitive Prices

EmbedIC has the unique source of supply. We can offer M29W128GH70N6E more competitive price for our customers. You can enjoy our best service by purchasing MICRON M29W128GH70N6E, Please feel free to contact for the best price of M29W128GH70N6E Memory. Click To Get Quotation

M29W128GH70N6E Overview

The M29W is an asynchronous, uniform block, parallel NOR Flash memory device manufactured on 90nm single-level cell (SLC) technology. READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode. 128Mb 3V Embedded Parallel NOR Flash. 

Features

• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65–3.6V (I/O buffers)
– VPPH = 12V for fast program (optional)
• Asynchronous random/page read
– Page size: 8 words or 16 bytes
– Page access: 25, 30ns
– Random access: 60ns1, 70, 80ns
• Fast program commands: 32-word (64-byte) write buffer
• Enhanced buffered program commands: 256-word
• Program time
– 16µs per byte/word TYP
– Chip program time: 5s with VPPH and 8s without VPPH
• Memory organization
– Uniform blocks: 128 main blocks, 128-Kbytes or 64-Kwords each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– Read from any block during a PROGRAM SUSPEND operation
– Read or program another block during an ERASE SUSPEND operation
• Unlock bypass, block erase, chip erase, write to buffer, enhanced buffer program commands
– Fast buffered/batch programming
– Fast block/chip erase
• VPP/WP# pin protection
– Protects first or last block regardless of block protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
• Extended memory block
– 128-word (256-byte) memory block for permanent, secure identification
• Common flash interface
– 64-bit security code
• Low power consumption: Standby and automatic mode
• Minimum 100,00 PROGRAM/ERASE cycles per block
• RoHS compliant packages
– 56-pin TSOP (N) 14mm x 20mm
– 64-ball TBGA (ZA) 10mm x 13mm
– 64-ball FBGA (ZS) 11mm x 13mm
• Electronic signature
– Manufacturer code: 0020h
– M29W128GH uniform, last block protected by VPP/WP#: 227Eh + 2221h + 2201h
– M29W128GL uniform, first block protected by VPP/WP#: 227Eh + 2221h + 2200h
• Automotive device grade temperature
– –40°C to +125°C (automotive grade certified)

Applications

  • Embedded Systems: Used in various embedded systems for firmware storage.
  • Industrial Automation: Applied in industrial control systems for configuration and data storage.
  • Networking Devices: Employed in routers, switches, and networking equipment.
  • Automotive Electronics: Found in automotive electronics for storing critical information.

Circuit Diagram

M29W128GH70N6E

Popular Products

  • MC9S08DN60MLC

    Manufacturer: NXP

    IC MCU 8BIT 60KB FLASH 32LQFP

    Product Categories: 8bit MCU

    Lifecycle:

    RoHS:

  • KMPC875CVR133

    Manufacturer: NXP

    IC MPU MPC8XX 133MHZ 256BGA

    Product Categories: MPU

    Lifecycle:

    RoHS:

  • PIC16F527-E/P

    Manufacturer: Microchip

    IC MCU 8BIT 1.5KB FLASH 20DIP

    Product Categories: 8bit MCU

    Lifecycle:

    RoHS:

Product evaluation

  • Looking forward to your comment

  • Comment

    Verification Code * 

Compare products

Compare Empty