4Gbit (512Mx8bit) NAND Flash
Price comparison from authorized distributors
HY27UF084G2B Competitive Prices
EmbedIC has the unique source of supply. We can offer HY27UF084G2B more competitive price for our customers. You can enjoy our best service by purchasing HYNIX HY27UF084G2B, Please feel free to contact for the best price of HY27UF084G2B Memory. Click To Get Quotation
The HY27UF084G2B is a NAND Flash memory chip with a focus on high-capacity data storage, commonly used in a wide range of electronic devices and systems. It offers non-volatile memory storage with fast read and write capabilities.
Hynix NAND HY27UF(08/16)4G2B Series have 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the mostcost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
The device contains 4096 blocks, composed by 64 pages. A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in typical 1.5ms on a 128K-byte block.
Data in the page can be read out at 25ns cycle time per byte(x8). The I/O pins serve as the ports for address and data input/output as wellas command input.
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
MULTIPLANE ARCHITECTURE
- Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time.
NAND INTERFACE
- x8/x16 bus width.
- Address/ Data Multiplexing
- Pinout compatiblity for all densities
SUPPLY VOLTAGE
- 3.3V device : Vcc = 2.7 V ~3.6 V
MEMORY CELL ARRAY
- x8 : (2K + 64) bytes x 64 pages x 4096 blocks
- x16 : (1K + 32) words x 64 pages x 4096 blocks
PAGE SIZE
- (2K + 64 spare) Bytes
- (1K + 32 spare) Words
BLOCK SIZE
- (128K + 4Kspare) Bytes
- (64K + 2Kspare) Words
PAGE READ / PROGRAM
- Random access : 25us (max.)
- Sequential access : 25ns (min.)
- Page program time : 200us (typ.)
- Multi-page program time (2 pages) : 200us (Typ)
COPY BACK PROGRAM
- Automatic block download without latency time
FAST BLOCK ERASE
- Block erase time: 1.5ms (Typ)
- Multi-block erase time (2 blocks) : 1.5ms (Typ) STATUS REGISTER
- Normal Status Register (Read/Program/Erase)
- Extended Status Register (EDC)
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code
- 2nd cycle : Device Code
- 3rd cycle : Internal chip number, Cell Type, Number of Simultaneously Programmed Pages.
- 4th cycle : Page size, Block size, Organization, Spare size
- 5th cycle : Multiplane information
CHIP ENABLE DON’T CARE
- Simple interface with microcontroller HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions. DATA RETENTION
- 100,000 Program/Erase cycles (with 1bit/528byte ECC)
- 10 years Data Retention
PACKAGE
- HY27UF(08/16)4G2B-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27UF(08/16)4G2B-T (Lead)
- HY27UF(08/16)4G2B-TP (Lead Free)
Manufacturer: Microchip
IC MCU 32BIT 32KB ROM 217BGA
Product Categories: 32bit MCU
Lifecycle:
RoHS:
Manufacturer: Texas Instruments
IC MCU 16BIT 120KB FLASH 100LQFP
Product Categories: 16bit MCU
Lifecycle:
RoHS:
Manufacturer: Texas Instruments
IC MCU 16BIT 16KB FLASH 38TSSOP
Product Categories: 16bit MCU
Lifecycle:
RoHS:
Manufacturer: Microchip
Digital Signal Processors & Controllers - DSP, DSC 16Bit 40MIPS 128KB Flash
Product Categories: 16bit DSP
Lifecycle:
RoHS:
Looking forward to your comment
Comment
8 Bit MCU, Flash, PIC16 Family PIC16F7XX Series Microcontrollers, 20 MHz, 7 KB, ...
EEPROM 2K 256 X 8 2.5V SERIAL EE IND
System-On-Modules - SOM RCM2200
32-bit Arm Cortex-A53 vision processor with ISP, powerful 3D GPU, dual APEX-2 v...
IC MCU 8BIT 60KB FLASH 44QFP
DSP 20MHZ 44QFP
1
2
3
4
5
6