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Home > Embedded ICs > Embedded - Controller > HMC-AUH312
Analog Devices

HMC-AUH312

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HMC-AUH312 Overview

The HMC-AUH312 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), HEMT, low noise, wideband amplifier die that operates between 500 MHz and 80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The amplifier provides 10 dB of small signal gain and a maximum output amplitude of 2.5 V p-p, which makes it ideal for use in broadband wireless, fiber optic communications, and test equipment applications.

The amplifier die occupies 1.2 mm × 1.0 mm, facilitating easy integration into a multichip module (MCM). The HMC-AUH312 can be used with or without a bias tee, and requires off-chip blocking components and bypass capacitors for the dc supply lines. Adjustable gate voltages allow for gain adjustment.

Features

  • Small signal gain: >8 dB
  • 80 GHz distributed amplifier
  • Configurable with or without bias tees for VDD and VGG1 bias
  • Low power dissipation
    • 300 mW with bias tee at VDD = 5 V
    • 360 mW without bias tee at VDD = 6 V
    • 480 mW without bias tee at VDD = 8 V
  • Die size: 1.2 mm × 1.0 mm × 0.1 mm

Applications

  • Fiber optic modulator drivers
  • Fiber optic photoreceiver postamplifiers
  • Low noise amplifier for test and measurement equipment
  • Point to point and point to multipoint radios
  • Wideband communication and surveillance systems
  • Radar warning receivers

Specifications

  • Package / Case Die

  • Voltage - Supply 8V

  • Frequency 500MHz ~ 65GHz

  • RF Type General Purpose

  • Current - Supply 60mA

  • Gain 10dB

  • Supplier Device Package Die

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