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SRAM, 4 Mbit, 256K x 16bit, 2.4V to 5.5V, TSOP-II, 44 Pins, 55 ns
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DESCRIPTION
The BS616LV4017 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with maximum CMOS standby current of 4/20uA at Vcc=3/5V at 85O C and maximum access time of 55/70ns. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616LV4017 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV4017 is available in DICE form, JEDEC standard 44-pin TSOP II and 48-ball BGA package.
FEATURES
-Wide VCC operation voltage : 2.4V ~ 5.5V
-Very low power consumption :
VCC = 3.0V Operation current : 27mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 2/4uA (Max.) at 70/85°C
VCC = 5.0V Operation current : 65mA (Max.) at 55ns 10mA (Max.) at 1MHz Standby current : 10/20uA (Max.) at 70/85°C
Operating Temperature Max 85°C
Supply Voltage Range 2.4V to 5.5V
Access Time 55ns
Memory Size 4Mbit
SRAM Memory Configuration 256K x 16bit
No. of Pins 44Pins
Memory Case Style TSOP-II
MSL -
Operating Temperature Min -40°C
Product Range -
Automotive Qualification Standard -
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