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Home > Embedded ICs > Embedded - Memory > AS4C128M32MD2-18BCN

AS4C128M32MD2-18BCN

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AS4C128M32MD2-18BCN Overview

The AS4C128M32MD2-18BCN is a high-performance SDRAM with a capacity of 512 Mb. It has a x32 organization, which means that it has 32 data lines and can transfer 32 bits of data at a time. The device operates with a single 2.5V±0.2V power supply and has a maximum clock frequency of 166 MHz. The SDRAM supports programmable read or write burst lengths of 1, 2, 4, 8, and full page, and has a burst termination option.

Features

  • High-speed data transfer rates: The AS4C128M32MD2-18BCN can transfer data at a maximum rate of 166 MHz, which translates to a data rate of 332 Mbps (megabits per second).
  • Low power consumption: The SDRAM operates at a low power supply voltage of 2.5V±0.2V and consumes very low power during operation.
  • Burst mode operation: The device supports programmable read or write burst lengths of 1, 2, 4, 8, and full page, allowing for high-speed data transfer.
  • Auto-precharge and self-refresh modes: The SDRAM supports auto-precharge and self-refresh modes to conserve power.
  • RoHS compliant: The AS4C128M32MD2-18BCN is RoHS compliant, which means that it is free of lead and other hazardous materials.

Specifications

  • Clock Frequency 533MHz

  • Operating Temperature -25℃ ~ 85℃ (TC)

  • Memory Interface Parallel

  • Write Cycle Time - Word, Page 15ns

  • Memory Size 4Gb (128M x 32)

  • Package / Case 134-VFBGA

  • Technology SDRAM - Mobile LPDDR2

  • Voltage - Supply 1.14V ~ 1.95V

  • Mounting Type Surface Mount

  • Memory Type Volatile

  • Memory Format DRAM

  • Supplier Device Package 134-FBGA (10x11.5)

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