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Toshiba launches new 1200V silicon carbide MOSFET suitable for high-efficiency power supplies

Date: 27-10-2020 ClickCount: 653

Toshiba introduced a new 1200V silicon carbide (SiC) MOSFET---"TW070J120B". This product is oriented to industrial applications (including large-capacity power supplies).

MOSFET

The power MOSFET adopts the new material of silicon carbide (SiC). Compared with conventional silicon (Si) MOSFET and IGBT products, it has high withstand voltage, high-speed switching and low on-resistance characteristics, which is conducive to reducing power consumption and streamlining the system. .

The new product adopts Toshiba's second-generation chip design and production that can improve the reliability of silicon carbide MOSFETs, and realizes the characteristics of low input capacitance, low gate input charge, and low drain-source on-resistance. Compared with the 1200V silicon insulated gate bipolar transistor (IGBT) "GT40QR21" introduced by Toshiba, the "TW070J120B" turn-off switching loss is reduced by about 80%, the switching time (fall time) is shortened by about 70%, and it can be used at a temperature not exceeding 20A. Provides low turn-on voltage under drain current.

Its gate threshold voltage is set in a higher voltage range from 4.2V to 5.8V, which helps reduce the risk of failure (unexpected opening or closing). In addition, the built-in silicon carbide Schottky barrier diode (SBD) with low forward voltage also helps reduce power loss.

In industrial applications such as large-capacity AC-DC converters, photovoltaic inverters, and large-capacity bidirectional DC-DC converters, this new type of MOSFET will not only achieve the purpose of improving efficiency by reducing power loss, but also will reduce equipment The size contributes.

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