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Home > Embedded ICs > Embedded - Microcontroller Unit (MCU) > TPS22958DGKR
Texas Instruments

TPS22958DGKR

TPS22958DGKR

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TPS22958DGKR Overview

The TPS22958x is a small, single channel load switch with an adjustable rise time. The device contains an N-Channel MOSFET that can operate over an input voltage range of 0.6 V to 5.5 V and can support a maximum continuous current of 4 A (DGK package) or 6 A (DGN package). The switch is controlled by an on/off input, which is capable of interfacing directly with low voltage control signals.

The rise time of the device can be externally controlled in order to avoid inrush current. Attaching a capacitor to the CT pin will change the rise time: increasing the value of the capacitor will increase the rise time. The TPS22958x is available in two space-saving packages (DGK and DGN) with or without a thermal pad for high power dissipation. The device is characterized for operation over the free-air temperature range of -40°C to 105°C.

Features

  • Integrated N-Channel Load Switch
  • Input Voltage Range: 0.6 V to 5.5 V
  • VBIAS Voltage Range: 2.5 V to 5.5 V
  • RON Resistance
    • RON = 14 m at VIN = 5 V (VBIAS = 5 V)
    • RON = 13 m at VIN = 3.3 V (VBIAS = 5 V)
    • RON = 13 m at VIN = 1.8 V (VBIAS = 5 V)
  • 4 A Maximum Continuous Switch Current (DGK Package)
  • 6 A Maximum Continuous Switch Current (DGN Package)
  • Low Quiescent Current
    • 55 μA at VBIAS = 5 V
  • Low Control Input Threshold Enables Use of
    1.2 V/1.8 V/2.5 V/3.3 V Logic
  • Adjustable Rise Time(1)
  • Quick Output Discharge (QOD)(2)
  • DGK 8-Pin Package:
    • 3.0 mm x 4.9 mm x 1.1 mm and 0.65 mm pitch
  • DGN 8-Pin Package with Thermal Pad:
    • 3.0 mm x 4.9 mm x 1.1 mm and 0.65 mm pitch
  • ESD Performance Tested per JEDEC STD.
    • 2-kV HBM and 1-kV CDM
  • Latch-Up Performance Exceeds 100 mA per JESD 78, Class II
  • GPIO Enable – Active High See section for CT value vs. rise time Not featured in the TPS22958N device.

Specifications

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