TPS22916CNYFPR Texas Instruments MCU

TPS22916CNYFPR Overview

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Description

The TPS22916xx is a small, single channel load switch using a low leakage P-ChannelMOSFET for minimum power loss. Advanced gate control design supports operating voltages as low as 1V with minimal increase in ON-Resistance and power loss.

Multiple timing options are available to support various system loading conditions. Forheavy capacitive loads, the slow turnon timing in the C version minimizes the inrush current. Incases with light capacitive loads, the fast timing in the B version reduces required waittime.

The switch ON state is controlled by a digital input that is capable of interfacingdirectly with low-voltage control signals. Both Active High and Active Low (L) versions areavailable. When power is first applied, a Smart Pull Down is used to keep the ON pin from floatinguntil system sequencing is complete. Once the ON pin is deliberately driven high(≥V_IH), the Smart Pull Down is disconnected to prevent unnecessary powerloss.

The TPS22916xx is available in a small, space saving 0.78 mm × 0.78 mm, 0.4-mm pitch,0.5-mm height 4-pin Wafer-Chip-Scale (WCSP) package (YFP). The device is characterized foroperation over a temperature range of –40°C to +85°C.

Features

Input Operating Voltage Range (V_IN): 1 V–5.5 V
Maximum Continuous Current (I_MAX): 2 A
ON-Resistance (R_ON):
- 5 V_IN = 60 mΩ (typ), 100 mΩ (85°C max)
- 1.8 V_IN = 100 mΩ (typ), 150 mΩ (85°C max)
- 1 V_IN = 200 mΩ (typ), 325 mΩ (85°C max)
Ultra-Low Power Consumption:
- ON State (I_Q): 0.5 μA (typ), 1 μA (max)
- OFF State (I_SD): 10 nA (typ), 100 nA (max)
- TPS22916CL (I_SD): 100 nA (typ), 300nA (max)
Smart ON Pin Pull Down (R_PD):
- ON ≥ V_IH (I_ON): 10 nA (max)
- ON ≤ V_IL (R_PD): 750 kΩ(typ)
Slow Timing in C Version Limits Inrush Current:
- 5-V Turnon time (t_ON): 1400 μs at 5 mV/μs
- 1.8-V Turnon time (t_ON): 3000 μs at 1 mV/μs
- 1-V Turnon time (t_ON): 6500 μs at 0.3 mV/μs
Fast Timing in B Version Reduces Wait Time:
- 5-V Turnon time (t_ON): 115 μs at 57 mV/μs
- 1.8-V Turnon time (t_ON): 250 μs at 12 mV/μs
- 1-V Turnon time (t_ON): 510 μs at 3.3 mV/μs
Always-ON True Reverse Current Blocking (RCB):
- Activation Current (I_RCB): –500 mA(typ)
- Reverse Leakage (I_IN,RCB): –300 nA(max)
Quick Output Discharge (QOD): 150 (typ)
(N version has no QOD)
Active Low Enable Option (L Version)