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Home > Embedded ICs > Embedded - Memory > SST39VF3201-70-4I-B3KE
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SST39VF3201-70-4I-B3KE

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SST39VF3201-70-4I-B3KE Overview

*Not Recommended For New Design*The SST39VF3201 device is organized in 2M x16, The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

Please consider this deviceSST39VF3201C

Features

  • Organized as 2M x16: SST39VF3201/3202
  • Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
  • Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF3202– Bottom Block-Protection (bottom 32 KWord)for SST39VF3201
  • Sector-Erase Capability– Uniform 2 KWord sectors
  • Block-Erase Capability– Uniform 32 KWord blocks
  • Chip-Erase Capability
  • Erase-Suspend/Erase-Resume Capabilities
  • Hardware Reset Pin (RST#)
  • Security-ID Feature– SST: 128 bits; User: 128 bits
  • Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
  • Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)
  • All non-Pb (lead-free) devices are RoHS compliant

Specifications

  • Mounting Style SMD/SMT

  • Maximum Operating Current 9 mA

  • Operating Temperature + 85 C

  • Architecture Sector Erase

  • Memory Type Multi-Purpose Flash

  • Supply Voltage - Min 2.7 V

  • Access Time 70 ns

  • Memory Size 32 Mbit

  • Timing Type Asynchronous

  • Package / Case TFBGA-48

  • Packaging Tray

  • Supply Voltage - Max 3.6 V

  • Interface Type Parallel

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