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Home > Embedded ICs > Embedded - Memory > SST39VF1601-70-4C-EKE
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SST39VF1601-70-4C-EKE

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SST39VF1601-70-4C-EKE Overview

The SST39VF1601 device is 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. 

The SST39VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

Features

  • Organized as 1M x16: SST39VF1601/1602

  • Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)

  • Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602– Bottom Block-Protection (bottom 32 KWord)for SST39VF1601

  • Sector-Erase Capability– Uniform 2 KWord sectors

  • Block-Erase Capability– Uniform 32 KWord blocks

  • Chip-Erase Capability

  • Erase-Suspend/Erase-Resume Capabilities

  • Hardware Reset Pin (RST#)

  • Security-ID Feature– SST: 128 bits; User: 128 bits

  • Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)

  • Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)

  • All non-Pb (lead-free) devices are RoHS compliant

Specifications

  • Mounting Style SMD/SMT

  • Maximum Operating Current 18 mA

  • Operating Temperature + 70 C

  • Organization 1 MB x 16

  • Data Bus Width 16 bit

  • Architecture Sectored

  • Memory Type NOR Flash

  • Supply Voltage - Min 2.7 V

  • Access Time 70 ns

  • Memory Size 16 Mbit

  • Package / Case TSOP-48

  • Packaging Tray

  • Supply Voltage - Max 3.6 V

  • Interface Type Parallel

  • Factory Pack Quantity 96

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