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Home > Embedded ICs > Embedded - Memory > SST39SF040-70-4C-WHE
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SST39SF040-70-4C-WHE

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SST39SF040-70-4C-WHE Overview

The SST39SF040 is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF040 writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.

Features

  • Organized as 128K x8 / 256K x8 / 512K x8
  • Single 4.5-5.5V Read and Write Operations
  • Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
  • Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical)
  • Sector-Erase Capability– Uniform 4 KByte sectors
  • Fast Read Access Time:– 55 ns– 70 ns
  • Latched Address and Data
  • Automatic Write Timing– Internal VPP Generation
  • Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040
  • End-of-Write Detection– Toggle Bit– Data# Polling
  • TTL I/O Compatibility
  • JEDEC Standard– Flash EEPROM Pinouts and command sets
  • Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP
  • All devices are RoHS compliant
  • All non-Pb (lead-free) devices are RoHS compliant

Specifications

  • Mounting Style SMD/SMT

  • Maximum Operating Current 25 mA

  • Operating Temperature + 70 C

  • Organization 512 KB x 8

  • Data Bus Width 8 bit

  • Architecture Sectored

  • Memory Type NOR Flash

  • Supply Voltage - Min 4.5 V

  • Access Time 70 ns

  • Memory Size 4 Mbit

  • Package / Case TSOP-32

  • Packaging Tray

  • Supply Voltage - Max 5.5 V

  • Interface Type Parallel

  • Factory Pack Quantity 208

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