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SRAM, MoBL®, 16 Mbit, 1M x 16bit, 1.65V to 2.25V, VFBGA, 48 Pins, 55 ns
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CY62167EV18LL-55BVXI Competitive Prices
EmbedIC has the unique source of supply. We can offer CY62167EV18LL-55BVXI more competitive price for our customers. You can enjoy our best service by purchasing CYPRESS CY62167EV18LL-55BVXI, Please feel free to contact for the best price of CY62167EV18LL-55BVXI SRAM. Click To Get Quotation
The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when:
■ The device is deselected (CE1 HIGH or CE2 LOW)
■ Outputs are disabled (OE HIGH)
■ Both byte high enable and byte low enable are disabled (BHE, BLE HIGH) or
■ A write operation is in progress (CE1 LOW, CE2 HIGH, and WE LOW)
■ Configurable as 1 M × 16 or as 2 M × 8 SRAM
■ Very high speed: 45 ns
■ Wide voltage range: 4.5 V to 5.5 V
■ Ultra low standby power
❐ Typical standby current: 1.5 µA
❐ Maximum standby current: 12 µA
■ Ultra low active power
❐ Typical active current: 2.2 mA at f = 1 MHz
■ Easy memory expansion with CE1, CE2, and OE features
■ Automatic power-down when deselected
■ CMOS for optimum speed and power
■ Offered in 48-pin TSOP I package
Mounting Style SMD/SMT
Maximum Operating Current 30 mA
Organization 1 M x 16
Memory Type CMOS
Supply Voltage - Min 1.65 V
Minimum Operating Temperature - 40 C
Type Asynchronous
Access Time 55 ns
Memory Size 16 Mbit
Package / Case VFBGA-48
Packaging Tray
Maximum Operating Temperature + 85 C
Supply Voltage - Max 2.25 V
Factory Pack Quantity 480
Manufacturer: NXP
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